▎ 摘　　要

We present a theoretical study of the electron-surface phonon interaction in mono-layer graphene (1LG) on polar substrates such as SiO2, HfO2, SiC and hexagonal BN. Thus we have used the eigen energies derived from the tight-binding Hamiltonian in mono-layer graphene. Our results indicate that the electron-surface phonon interaction depends on the polar substrate. Such polar substrates allow for the existence of polar optical phonons localized near the graphene-substrate interface which could be an important scattering source for graphene carriers through the long-range Frohlich coupling. Likewise, we have investigated the effect of various dielectrics on the SO phonon-limited mobility, the SO phonon-limited resistivity, the SO phonon-limited conductivity and the scattering rate in single layer graphene by considering the effects of the SO optical phonon scattering arising from the polar substrates and by varying the temperature, the charge carrier density and the physical separation between graphene and interface of dielectric substrate.