▎ 摘　　要

A detailed investigation of the low-frequency noise in graphene/n-Si(100) junctions at forward and reverse bias has been performed. The graphene has been synthesized directly on the Si(100) substrate by a microwave plasma-enhanced chemical vapor deposition (PECVD) without any catalyst. Relation between the current-voltage (I-V) and the noise characteristics has been found. Tunneling through the graphene/Si junction is determined to be dominant in the observed linear (ohmic) part of the I-V characteristic at low bias, where electrical noise increases as a square of flowing current through the sample. The prevailing type of defects, density of the graphene defect and number of the graphene layers have been determined using Raman spectroscopy. Comparison between the measured noise and Raman spectra has been performed to evaluate influence of properties of the graphene structure on the low-frequency noise characteristics of the graphene/n-Si(100) junctions.