• 文献标题:   Patterns of Solution-Processed Graphene Oxide Produced by a Transfer Printing Method
  • 文献类型:   Article
  • 作  者:   CHANG CW, HON MH, LEU IC
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF THE ELECTROCHEMICAL SOCIETY
  • ISSN:   0013-4651 EI 1945-7111
  • 通讯作者地址:   Natl Univ Tainan
  • 被引频次:   10
  • DOI:   10.1149/2.118206jes
  • 出版年:   2012

▎ 摘  要

We use a simple and all-aqueous method, transfer printing, to pattern solution-processed graphene oxide (GO). We took advantage of the naturally charged property of GO, which were prepared using the Hummers' method, to pattern it on the Si/SiO2 substrates which were pre-soaked in polyethyleneimine (PEI) solution. The charged GO was spin-coated on the polydimethylsiloxane (PDMS) stamp to achieve maskless patterning by a transfer printing method. The feature sizes of the printed GO patterns obtained range from 20 to 90 mu m and the transfer-printed area reaches 2 cm* 2 cm. We also discuss the mechanisms of the transfer process, which are dependent on the different strengths of nonspecific adhesion at the interface between the PDMS-GO sheets and substrate-GO sheets, as well as the electrostatic interaction between charged functional groups on GO and PEI molecules. Raman spectra and mapping not only show the result of area-selective patterning, but also show the continuity of the GO patterns. Finally, we use this method to fabricate GO patterns on glass substrate and transform these GO patterns to reduced graphene oxide through thermal treatment. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.118206jes] All rights reserved.