▎ 摘　　要

Resistive switching (RS), an electric property based on the forming and rupture of conductive filaments in metal-insulator-metal structures, has attracted intensive attention due to its potential application in next generation energy-efficient and area-efficient memory devices. In situ studies of the RS effect are urgently needed for its mechanism understanding and memristive performance improvement. Here investigations of both the RS effect as well as the gate tunable conductance quantization effect are realized by co-designing an Ag/SiO2 based memory structure on a graphene local sensor. This design enables self-monitoring of the working states of the memristor in real-time by virtue of the graphene sensor. These findings pave the way for further investigations of on-chip electronics and quantum physics.