▎ 摘　　要

Understanding charge carrier transport mechanisms in graphene fabricated by chemical vapor deposition (CVD) is important for electronic and thermal applications. We report results of structural, low temperature resistivity, and thermopower measurements in approximately four atomic layer thick centimeter size graphene. A semiconducting temperature dependence of the resistivity and a metallic temperature dependence of the thermopower in the same samples have been observed. The obtained results imply that intergranular charge carrier scattering in CVD graphene plays a major role in the electrical transport and a minor role in the thermal transport. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792032]