▎ 摘　　要

Amorphous GaN, ZnO and TiN ultra-thin films were deposited on graphene/PET to form hybrid films through the vacuum thermal evaporation, to protect the grarphene from scratching in the case of no damage to its performance. The structural characterization of the hybrid films were performed by using X-ray photoelectron spectroscoPy. It was concluded that the absence of the C-N bond at the interface of the GaN/graPhene allowed the pi-electrons of graphene free of movement to take their conductive roles in the hybrid film. Due to the formation of C=0 bond at the interface of the ZnO/graphene, the pi-electrons of grarhene were bounded and therefore, the ZnO/graphene hybrid film was hardly conductive. The GaN and ZnO were easily evaporated to form the continuous layers on the graphene than TiN, considering the relatively high molten temperature of 2950 degrees C TiN comparison to those of 1700 degrees C GaN and 1975 degrees C ZnO at normal pressure. The discontinuous TiN layer lost its function to protect the graphene. Considering the comprehensive performance, the ultra-thin GaN film was suitable to act as the protection layer as well as the window layer on the graphene/PET.