• 文献标题:   Synthesis of Vertical Graphene Nanowalls on Substrates by PECVD as Effective EMI Shielding Materials
  • 文献类型:   Article
  • 作  者:   WANG ZH, SHEN HL, LUO KW, MAO WB, XU YJ, GE JW, ZHU JK, LI YF, WU TR
  • 作者关键词:   vertical graphene nanowall, electromagnetic interference shielding, chemical vapor deposition, rapid growth, cu foam
  • 出版物名称:   ACS APPLIED ELECTRONIC MATERIALS
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.1021/acsaelm.2c00670
  • 出版年:   2022

▎ 摘  要

Electromagnetic interference (EMI) shielding materials with low thickness and improved EMI shielding performance are highly required. Herein, by utilizing the plasma-enhanced chemical vapor deposition (PECVD) method with the optimized source power of the plasma generator, vertical graphene nanowalls (VGNs) with a relatively rapid growth rate of similar to 5 mu mmiddoth(-1) were prepared on substrates. The porous conductive VGNs exhibited preferable EMI shielding performance. In a frequency range of 8.2-12.4 GHz, the EMI shielding effectiveness (SE) value of VGNs with a thickness of 47.5 mu m could reach 26.2 dB. In addition, VGNs with controllable thickness were also synthesized on Cu foam substrates. The combination of VGNs and Cu foam significantly improved the porosity and interfacial coupling effect of the composites. By growing VGNs with a thickness of similar to 20 mu m on the Cu foam, their absorption efficiency got largely enhanced by 13.8 dB (32.2%) compared with the pristine Cu foam. Subsequently, the total EMI SE of the VGNs/Cu foam composite films got enhanced by 13.5 dB (20.8%) compared with the pristine Cu foam. The VGNs and their composites with preferable EMI shielding performance establish potential for practical applications in EMI shielding.