▎ 摘　　要

A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This device has a gate length of 0.5 mu m and a gate width of 2x40 mu m. The G-FET channel is patterned into an array of bow-tie-shaped nanoconstrictions, resulting in the device impedance levels of similar to 50 Omega and the ON-OFF ratios of >= 4. The integrated mixer circuit is implemented in coplanar waveguide technology and realized on a 100-mu m-thick highly resistive silicon substrate. The mixer conversion loss is measured to be 29 +/- 2 dB across the 185-210-GHz band with 12.5-11.5 dBm of local oscillator (LO) pump power and >15-dB LO-RF isolation. The estimated 3-dB IF bandwidth is 15 GHz.