▎ 摘　　要

Unlike conventional dry stamp-based printing methodologies, the suggested wet PDMS stamping technique allows for the generation of well-patterned graphene source/drain electrode structures. It is clarified that the electrical characteristics of soluble In-Ga-Zn-O (IGZO) TFTs can be improved effectively by adjusting the work function of transfer-printed graphene electrodes with a simple, facile Au doping technique. By implementing the transfer-printed, Au-doped graphene layers as a source/drain electrode and the newly developed chemical structure-tailored IGZO semiconductors as a soluble channel layer, the high performance graphene/IGZO TFTs are demonstrated with a field-effect mobility of 3.2 cm(2) V-1 s(-1), which is far superior to the previously reported TFTs employing the printable electrode and a soluble oxide semiconductor.