• 文献标题:   Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots
  • 文献类型:   Article
  • 作  者:   WANG L, ZHANG YK, ZHANG P, WEN DZ
  • 作者关键词:   physical transient, graphene quantum dot, flexibility, or gate
  • 出版物名称:   NANOMATERIALS
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.3390/nano12223976
  • 出版年:   2022

▎ 摘  要

Biomaterials have attracted attention as a major material for biodegradable and transient electronic devices. In this work, biocompatible gelatin-doped graphene quantum dot films are reported as active layer switching memories with good electrical properties and physical transient properties. Such nonvolatile memory devices have write-once-read-many electrical properties and a concentrated distribution of low-resistance and high-resistance states. It provides a solution for the current obstacle of resistive memory storage and computing integration. Based on the sensitivity of the device to ultraviolet light, the "OR gate" logic operation is completed. Furthermore, the active layer can be dissolved in deionized water within 15 min, and the gelatin substrate-based device can be destroyed immediately in water, indicating the potential biodegradation and physical transient properties of our fabricated device. Biocompatible memory devices are environmentally friendly, sustainable for safe storage, and low-cost, making them ideal for storage applications.