▎ 摘　　要

The substitution of nitrogen atoms in the lattice plane of the graphene can adjust the electronic properties of the graphene to translate it from the half-metal to the n-type semiconductor. Here, we report a practicable growth of nitrogen-doped graphene films with the nitrogen atoms doped content of 4.4-7.5% by the sole solid precursor based chemical vapor deposition method. After the post-annealing process at high temperature, the morphology and crystallization quality of the nitrogen-doped graphene film were considerably improved. The as-synthesized nitrogen-doped graphene films exhibit typical n-type behavior with the electron carrier density of approximately 6.55 x 10(12) cm(-2) and the Hall mobility of around 522 cm(2)V(-1)s(-1). Published by AIP Publishing.