• 文献标题:   Electronic Properties of Defect-Free and Defective Bilayer Graphene in an Electric Field
  • 文献类型:   Article
  • 作  者:   MAJIDI R, TABRIZI KG
  • 作者关键词:   electronic band structure, bilayer graphene, stonewales defect, electric field
  • 出版物名称:   FULLERENES NANOTUBES CARBON NANOSTRUCTURES
  • ISSN:   1536-383X
  • 通讯作者地址:   GC Shahid Beheshti Univ
  • 被引频次:   18
  • DOI:   10.1080/1536383X.2010.494780
  • 出版年:   2011

▎ 摘  要

The effect of electric field on electronic properties of defect-free and defective bilayer graphene is studied using density functional theory. The results indicate that the defect-free bilayer graphene exhibits semi-metallic properties. We considered the most topological defect, known as Stone-Wales defect in grapheme layers. The defect breaks the symmetry substantially and makes the defective bilayer graphene as semiconductor. The band structures of defect-free and defective bilayer graphene are changed, and a gap between bands is observed by applying an electric field perpendicular to the layers. It was found that the band gap enhances with increasing of the electric field.