• 文献标题:   Resistive switching in graphene/graphene oxide/ZnO heterostructures
  • 文献类型:   Article
  • 作  者:   KAPITANOVA OO, PANIN GN, KONONENKO OV, BARANOV AN, KANG TW
  • 作者关键词:   graphene, graphene oxide, zinc oxide nanorod, planar vertical layer heterostructure, resistive switching memory, nonvolatile memory
  • 出版物名称:   JOURNAL OF THE KOREAN PHYSICAL SOCIETY
  • ISSN:   0374-4884 EI 1976-8524
  • 通讯作者地址:   Dongguk Univ
  • 被引频次:   7
  • DOI:   10.3938/jkps.64.1399
  • 出版年:   2014

▎ 摘  要

Planar and vertical heterostructures based on graphene/graphene oxide/ZnO nanorods were investigated using optical and electrical characterizations. ZnO nanorods grown on graphene substrate by using the hydrothermal method were used for local oxidation of graphene and the formation of self-assembled graphene/graphene oxide lateral and vertical heterostructures under an electric field. The graphene substrates were prepared by deposition of graphene oxide suspensions, followed by thermal reduction or the growth of graphene by using chemical vapor deposition. The vertical heterostructure demonstrated well-reproducible resistive switching for low offset voltage and could be used to fabricate high-density memory devices with low power consumption.