▎ 摘　　要

Graphene sheets synthesized by chemical vapor deposition were transferred and simultaneously doped using fluoropolymer supporting layers. The sheet resistance of the fluoropolymer-transferred graphene is between 300 and 730 Omega/sq, which is lower than that of poly[methyl methacrylate] (PMMA)-transferred graphene (930 Omega/sq). The measured graphene transmittance values exceed 95% regardless of the supporting layer type, and the work function of the fluoropolymer-transferred graphene is in the range of 4.5-4.7 eV, which is higher than the corresponding value for the PMMA-transferred graphene (4.3 eV). X-ray photoelectron and Raman spectroscopy data reveal that the fluoropolymer-transferred graphene has numerous C-F bonds on the surface exhibiting p-type semiconductor properties due to the high electronegativity of F. The obtained results indicate that the facile transfer method using fluoropolymers as supporting layers instead of PMMA can be an efficient way of reducing the sheet resistance and increasing the work function of produced graphene sheets.