• 文献标题:   Thermoelectric Transport Properties of Interface-Controlled p-type Bismuth Antimony Telluride Composites by Reduced Graphene Oxide
  • 文献类型:   Article
  • 作  者:   HWANG UG, KIM K, KIM W, SHIN WH, SEO WS, LIM YS
  • 作者关键词:   thermoelectric, bi2te3, interface control, reduced graphene oxide
  • 出版物名称:   ELECTRONIC MATERIALS LETTERS
  • ISSN:   1738-8090 EI 2093-6788
  • 通讯作者地址:   Pukyong Natl Univ
  • 被引频次:   1
  • DOI:   10.1007/s13391-019-00118-x
  • 出版年:   2019

▎ 摘  要

We report the thermoelectric transport properties of interface-controlled p-type bismuth antimony telluride (BST) composites using reduced graphene oxide (rGO). The composites were prepared by the spark plasma sintering (SPS) of BST-graphene oxide (GO) hybrid powder, which could induce the in situ reduction of GO into rGO. Compared to the pristine BST, the interface-controlled BST composites exhibited degraded electrical conductivities with similar Seebeck coefficients, consequently resulting in decreased power factors. However, thanks to the suppressed lattice thermal conductivity by the rGO network at the grain boundaries, this disadvantage could be compensated in terms of ZT. Our results will be helpful for understanding thermoelectric transport properties of various graphene-hybrid thermoelectric materials. [GRAPHICS]