• 文献标题:   Josephson effect in graphene SNS junction with a single localized defect
  • 文献类型:   Article
  • 作  者:   BOLMATOV D, MOU CY
  • 作者关键词:   electronic transport in nanoscale materials structure, electronic structure of nanoscale material, localization effect
  • 出版物名称:   PHYSICA BCONDENSED MATTER
  • ISSN:   0921-4526
  • 通讯作者地址:   Natl Tsing Hua Univ
  • 被引频次:   21
  • DOI:   10.1016/j.physb.2010.04.015
  • 出版年:   2010

▎ 摘  要

Imperfections change essentially the electronic transport properties of graphene. Motivated by a recent experiment reporting on the possible application of graphene as junctions, we study transport properties in graphene-based junctions with single localized defect. We solve the Dirac-Bogoliubov-de-Gennes equation with a single localized defect superconductor-normal(graphene)-superconductor (SNS) junction. We consider the properties of tunneling conductance and Josephson current through an undoped strip of graphene with heavily doped s-wave superconducting electrodes in the limit I-def << L << xi. We find that spectrum of Andreev bound states are modified in the presence of single localized defect in the bulk and the minimum tunneling conductance remains the same. The Josephson junction exhibits sign oscillations. (C) 2010 Elsevier B.V. All rights reserved.