• 文献标题:   Crystal-field effects in graphene with interface-induced spin-orbit coupling
  • 文献类型:   Article
  • 作  者:   CYSNE TP, FERREIRA A, RAPPOPORT TG
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Univ Fed Rio de Janeiro
  • 被引频次:   5
  • DOI:   10.1103/PhysRevB.98.045407
  • 出版年:   2018

▎ 摘  要

We consider theoretically the influence of crystalline fields on the electronic structure of graphene placed on a layered material with reduced symmetry and large spin-orbit coupling (SOC). We use a perturbative procedure combined with the Slater-Koster method to derive the low-energy effective Hamiltonian around the K points and estimate the magnitude of the effective couplings. Two simple models for the envisaged graphene-substrate hybrid bilayer are considered, in which the relevant atomic orbitals hybridize with either top or hollow sites of the graphene honeycomb lattice. In both cases, the interlayer coupling to a crystal-field-split substrate is found to generate highly anisotropic proximity spin-orbit interactions, including in-plane "spin-valley" coupling. Interestingly, when an anisotropic intrinsic-type SOC becomes sizable, the bilayer system is effectively a quantum spin Hall insulator characterized by in-plane helical edge states robust against the B ychkov-Rashb a effect. Finally, we discuss the type of substrate required to achieve anisotropic proximity-induced SOC and suggest possible candidates to further explore crystal-field effects in graphene-based heterostructures.