▎ 摘　　要

A breakthrough in graphene-oxide/silicon heterojunction solar cells is presented in which edge-oxidized graphene and an in-plane charge transfer dopant (Nafion) are combined to form a high-quality passivating contact scheme. A graphene oxide (GO):Nafion ink is developed and an advanced back-junction GO:Nafion/n-Si solar cell with a high-power conversion efficiency (18.8%) and large area (5.5 cm(2)) is reported. This scalable solution-based processing technique has the potential to enable low-cost carbon/silicon heterojunction photovoltaic devices.