• 文献标题:   Adlayer-Free Large-Area Single Crystal Graphene Grown on a Cu(111) Foil
  • 文献类型:   Article
  • 作  者:   LUO D, WANG MH, LI YQ, KIM C, YU KM, KIM YH, HAN HJ, BISWAL M, HUANG M, KWON Y, GOO M, CAMACHOMOJICA DC, SHI HF, YOO WJ, ALTMAN MS, SHIN HJ, RUOFF RS
  • 作者关键词:   adlayerfree, chemical vapor deposition cvd, cu 111, fold, single crystal graphene
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   IBS
  • 被引频次:   18
  • DOI:   10.1002/adma.201903615
  • 出版年:   2019

▎ 摘  要

To date, thousands of publications have reported chemical vapor deposition growth of "single layer" graphene, but none of them has described truly single layer graphene over large area because a fraction of the area has adlayers. It is found that the amount of subsurface carbon (leading to additional nuclei) in Cu foils directly correlates with the extent of adlayer growth. Annealing in hydrogen gas atmosphere depletes the subsurface carbon in the Cu foil. Adlayer-free single crystal and polycrystalline single layer graphene films are grown on Cu(111) and polycrystalline Cu foils containing no subsurface carbon, respectively. This single crystal graphene contains parallel, centimeter-long approximate to 100 nm wide "folds," separated by 20 to 50 mu m, while folds (and wrinkles) are distributed quasi-randomly in the polycrystalline graphene film. High-performance field-effect transistors are readily fabricated in the large regions between adjacent parallel folds in the adlayer-free single crystal graphene film.