▎ 摘　　要

Silicon-based conventional photodetectors have always been a vital part of many electronic and optoelectronic circuits because of their low fabrication cost, high device performance, and simple configuration. However, due to the relatively poor light-matter interaction and narrow bandgap in Si, these photodetectors generally suffer from a certain compromise in their photoresponsivity as well as broadband photoresponse. Here, a novel approach of coupling reduced-graphene oxide (rGO) decorated beta-In2S3 with Si has been demonstrated. beta-In2S3 thin film has been grown by a direct and transfer-free method on Si substrate and rGO has been drop-casted on beta-In2S3. This introduction of a double-heterojunction architecture results in a photoresponsivity of similar to 30.41 A/W at 625 nm at an applied voltage of -4 V with the response and recovery times of 60 and 40 mu s, respectively, along with a broadband response in the wavelength range of 400-1200 nm. The rGO acts as an efficient hole transporting layer, which readily reduces the recombination of the photogenerated electrons and holes, leading to high photoresponse. These results highlight a simple and cost-effective strategy to construct high-performance broadband photodetectors, which can be useful in future optoelectronic devices.