• 文献标题:   Direct Synthesis of Graphene Dendrites on SiO2/Si Substrates by Chemical Vapor Deposition
  • 文献类型:   Article
  • 作  者:   LI YX, LI ZH, LI QB, TIAN M, LI CH, SUN L, WANG JH, ZHAO X, XU SC, YU FP
  • 作者关键词:   graphene dendrite, sio2/si substrate, cvd, nanoelectronic application
  • 出版物名称:   NANOSCALE RESEARCH LETTERS
  • ISSN:   1931-7573 EI 1556-276X
  • 通讯作者地址:   Dezhou Univ
  • 被引频次:   0
  • DOI:   10.1186/s11671-020-3245-y
  • 出版年:   2020

▎ 摘  要

The long-standing interest in graphene has recently brought graphene-derived materials including graphene hydrogel, graphene fiber and graphene paper into sharp focus. These graphene-derived materials show outstanding properties in mechanics and physics. In this paper, for the first time, we demonstrate the novel synthesis of graphene dendrites on SiO2/Si substrates by chemical vapor deposition. The tree-like graphene dendrites with well-controlled morphology can be directly grown on both the Si and the SiO2 surfaces of the substrates by using methane and hydrogen as precursors. The graphene dendrites on SiO2/Si substrates can be directly used in the fabrication of the electronic device. The conductivity and the Hall mobility of graphene dendrites are similar to 286 Scm(-1) and similar to 574 cm(2)(Vs)(-1), respectively. Young's modulus of graphene dendrites is up to 2.26 GPa. The developed method avoids the need for a metal substrate and is scalable and compatible with the existing semiconductor technology, making graphene dendrites be very promising in nanoelectronic applications.