• 文献标题:   Electronic ground state in bilayer graphene with realistic Coulomb interactions
  • 文献类型:   Article
  • 作  者:   LEAW JN, TANG HK, SENGUPTA P, ASSAAD FF, HERBUT IF, ADAM S
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Natl Univ Singapore
  • 被引频次:   3
  • DOI:   10.1103/PhysRevB.100.125116
  • 出版年:   2019

▎ 摘  要

Both insulating and conducting electronic behaviors have been experimentally seen in clean bilayer graphene samples at low temperature, and there is still no consensus on the nature of the interacting ground state at half filling and in the absence of a magnetic field. Theoretically, several possibilities for the insulating ground states have been predicted for weak interaction strength. However, a recent renormalization-group calculation on a Hubbard model for charge-neutral bilayer graphene with short-range interactions suggests the emergence of low-energy Dirac fermions that would stabilize the metallic phase for weak interactions. Using a nonperturbative projective quantum Monte Carlo, we calculate the ground state for bilayer graphene using a realistic model for the Coulomb interaction that includes both short-range and long-range contributions. We find that a finite critical on-site interaction is needed to gap bilayer graphene and the transition belongs to the Gross-Neveu universality class, thereby confirming the Hubbard model expectations even in the presence of a long-range Coulomb potential, in agreement with our theoretical analysis. In addition, we also find that the critical on-site interactions necessary to destabilize the metallic ground state decrease with increasing interlayer coupling.