• 文献标题:   Research on rapid growth of monolayer graphene by vertical cold-wall CVD method
  • 文献类型:   Article
  • 作  者:   XU K, DUAN XY, LI Y, DU YX, YANG P, CHEN LM, ZENG FG
  • 作者关键词:   graphene, cvd, rapid growth, vertical coldwall
  • 出版物名称:   JOURNAL OF EXPERIMENTAL NANOSCIENCE
  • ISSN:   1745-8080 EI 1745-8099
  • 通讯作者地址:   Zhengzhou Univ Aeronaut
  • 被引频次:   0
  • DOI:   10.1080/17458080.2020.1818722
  • 出版年:   2020

▎ 摘  要

Chemical vapor deposition (CVD) is one of the most important methods for the preparation of graphene. Graphene is usually prepared using horizontal tube CVD (HT-CVD) method. However, the preparation of this method is too long, generally more than 2 h. In this article, a method called vertical cold-wall CVD (VCW-CVD) method was introduced for graphene preparation. Due to the vertical angle between direction of gas flow and sample surface, the reaction process of this method for graphene preparation is only 1 min. Accordingly, in this article, the modified parameter of graphene preparation by this method was discussed. Besides, the VCW-CVD graphene had an equal quality with the HT-CVD graphene, which was proved by measurement of conductivity, transmittance and heat stability.