▎ 摘　　要

Since graphene and other 2D materials have no bulk, a major issue is their sensitivity to surface contaminations, and the development of cleaning processes is mandatory. High density plasmas are attractive to treat (clean, dope, and pattern) 2D materials, because they are a mature industrial technology adapted to large area wafer. However, in these plasmas, the substrate is bombarded by a high flux of both thermal radicals and reactive ions with typical energy above 10 eV, which can easily damage atomic layer thin materials. We have investigated systematically the interaction of H-2 and He inductively coupled plasmas (ICPs) with graphene in industrial reactors. We report a specific issue associated with the use of H-2 plasma: they etch the inner part of plasma reactor walls, thus releasing impurities in the plasma, most notably O atoms that etch graphene and Si atoms which stick on it. The presence of parasitic oxygen presumably explains the discrepancies found in the literature regarding the impact of reactive plasmas on graphene damages. To get rid of this issue, we propose to use a fluorinated aluminum chamber. In this case, fluorine atoms which are shown to be harmless to graphene are the only impurity in the plasma. Under such conditions, H-2 ICP plasma is shown to clean graphene without damages if the ion energy is kept below about 15 eV. Published by AIP Publishing.