• 文献标题:   Measurements of the sheet resistance and conductivity of thin epitaxial graphene and SiC films
  • 文献类型:   Article
  • 作  者:   KRUPKA J, STRUPINSKI W
  • 作者关键词:   electric resistance measurement, graphene, semiconductor epitaxial layer, silicon compound, surface resistance, wide band gap semiconductor
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Warsaw Univ Technol
  • 被引频次:   83
  • DOI:   10.1063/1.3327334
  • 出版年:   2010

▎ 摘  要

Single postdielectric resonators operating on their quasi TE(011) modes were used for the measurement of the surface resistance and conductivity of graphene films grown on semi-insulating SiC substrates. With this technique the surface resistance was measured with an uncertainty of +/- 5% and the conductivity was evaluated with an uncertainty equal to the uncertainty in determining the film thickness. The room temperature conductivity of the graphene films proved to be in the range 5x10(6) to 6.4x10(6) S/m.