▎ 摘　　要

The role of CuO films in meliorating resistive switching behavior of graphene oxide (GO) in CuO/GO/CuO memory structure was investigated. An increase in the set voltage from 1.3 to 3.0 V and a step-like switching current was clearly observed when the GO film was sandwiched between two CuO layers. It is attributed to the fact that the set voltage of GO is lower than that of CuO and accumulated charge carriers located at the interface of GO and CuO can pass through CuO abruptly at set voltage of 3.0 V. Our results suggested that designed sandwich structure of materials with different set voltage enables to amend resistive switching response characteristics. (C) 2014 Elsevier B.V. All rights reserved.