▎ 摘　　要

Si nanoparticles were successfully entrapped between graphene nanosheets by simple self-assembly of chemically modified graphene (RGO) without using any chemical/physical linkers. The resulting Si/RGO architecture possessed a more efficient conducting/buffering framework for Si nanoparticles when compared to the framework of the mechanically mixed Si/RGO product. The Si/RGO architecture exhibited an improved cyclability (1481 mAh/g after 50 cycles) and showed favorable high-rate capability. (C) 2013 Elsevier B.V. All rights reserved.