• 文献标题:   Atomic Hydrogen Annealing of Graphene on InAs Surfaces and Nanowires: Interface and Morphology Control for Optoelectronics and Quantum Technologies
  • 文献类型:   Article
  • 作  者:   MOUSAVI SF, LIU YP, D ACUNTO G, TROIAN A, CARIDAD JM, NIU YR, ZHU L, JASH A, FLODGREN V, LEHMANN S, DICK KA, ZAKHAROV A, TIMM R, MIKKELSEN A
  • 作者关键词:   graphene, ina, nanowire, semiconductor, oxide, hydrogen, afm, xps, leem, xpeem
  • 出版物名称:   ACS APPLIED NANO MATERIALS
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1021/acsanm.2c03891 EA NOV 2022
  • 出版年:   2022

▎ 摘  要

Folding two-dimensional graphene around one-dimensional III-V nanowires yields a new class of hybrid nanomaterials combining their excellent complementary properties. However, important for high-quality electrical and optical performance, needed in many applications, are well-controlled oxide-free interfaces and a tight folding morphology. To improve the interface chemistry between the graphene and InAs, we annealed the samples in atomic hydrogen. Using surface-sensitive imaging, we found that the III-V native oxides in the interface can be reduced at temperatures that maintain the graphene and the III-V nanostructures. Transferring both single-and multilayer graphene flakes onto InAs NWs, we found that single layers fold tightly around the NWs, while the multilayers fold weakly with a decline of only a few degrees. Annealing in atomic hydrogen further tightens the folding. Together, this indicates that high-quality morphological and chemical control of this hybrid material system is possible, opening for future devices for quantum technologies and optoelectronics.