▎ 摘　　要

Based on the transfer-matrix method, the spin polarized transport properties through a ballistic graphene-based quantum tunneling junctions with the spin-orbit interaction have been investigated. It is found that the magnetoresistance (MR) oscillates with the Rashba spin-orbit interaction (RSOI) and the intrinsic spin-orbit interaction (ISOI). In addition, when the RSOI is present, the negative MR can be observed due to the spin-flip effect, whereas for the ISOI alone no such negative MR can be found. It is anticipated to apply such a phenomenon to design the electron devices based on the graphene. (C) 2010 American Institute of Physics. [doi:10.1063/1.3432438]