▎ 摘　　要

Graphene has been attracting a strong interest as a transparent electrode due to its unique properties. To date, large-area graphene growth has been realized by chemical vapor deposition (CVD) with a catalyst metal. Here, we present a simple and efficient method to synthesize graphene layers by amorphous carbon (a-C) film deposition from filtered vacuum arc system (FVAS). Few layer graphene films can be grown on nickel catalytic metal with high solubility of carbon by thermal annealing the amorphous carbon film. This is in contrast to CVD process, where the carbon source is essentially unlimited and controlling the quality of graphene layers depends on deposition of a-C films and thermal annealing parameters. Few layer graphene on catalytic metal was verified by a combination of Raman analyses and optical transparent measurements. This method of growing few layer graphene can provide valuable information for understanding the growth mechanism of graphene, which may simplify its controllable synthesis and applications. (C) 2012 Elsevier B.V. All rights reserved.