▎ 摘　　要

Memory devices are a key technology of our era and one of the constant challenges is the reduction of their power consumption. Herein, we demonstrate that graphene oxide with very few defects, that is, about 1 nm thin oxo-functionalized graphene derivative, can be used in memory devices operating at 3 V. A memory device stores charges in the material of the active channel. Thereby, writing and erasing information can be performed at low voltage, facilitating low power consumption. To enable operation at low voltage, a novel synthetic approach is necessary. We find that the selective non-covalent electrostatic functionalization of mainly organosulfate ions is possible with dodecylammonium. This functionalization allows the non-covalent coating of flakes with a polystyrene-derivative as nm-thin dielectric medium. The resulting polymer-wrapped composite has a height of about 5 nm. We find that the thin coating of a few nm is mandatory to make the memory device work at low voltage. Furthermore, a self-assembled monolayer of an imidazolium derivative further enhances the function of the memory device. The prepared composite materials are characterized by state-of-the-art analysis including solid state nuclear magnetic resonance spectroscopy and thermogravimetric analysis coupled with gas chromatography, mass spectroscopy or infrared spectroscopy. Reference experiments prove the importance of the controlled synthesis to enable the function of the memory device.