▎ 摘　　要

Evident spin valve signals are observed in Co/graphene/Co sandwich structures with both monolayer and two-layer graphene stacks at temperatures from 1.5 K to 300 K. All the devices demonstrate linear current-voltage curves, indicating that an Ohmic property is dominating rather than a tunneling effect. The vertical graphene spin valves have potential applications in high-density non-volatile memories.