• 文献标题:   DFT study on hydrogen storage of Be or V modified boron-doped porous graphene
  • 文献类型:   Article
  • 作  者:   ZOU JY, LIU ZY, GE Y, DING JY, NIE MJ, MIAO ZC, YANG ZH, WANG YH, BI L
  • 作者关键词:   polyporous graphene, boron doping, metal modification, hydrogen adsorption
  • 出版物名称:   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • ISSN:   1369-8001 EI 1873-4081
  • 通讯作者地址:  
  • 被引频次:   3
  • DOI:   10.1016/j.mssp.2022.106884
  • 出版年:   2022

▎ 摘  要

Based on density functional theory, the hydrogen storage performance of boron-doped porous graphene modified with beryllium or vanadium metal was studied. By changing the doping amount of boron and the doping sites, it was found that metals have the highest adsorption energy on B-16-PG and B-22-PG doped with a pair of boron atoms and two pairs, respectively. Be-2-B-16-PG and Be2-B-22-PG can adsorb six hydrogen molecules, the corresponding hydrogen storage capacities are 7.30 wt% and 7.40 wt%, respectively. V2-B16-PG can adsorb up to ten hydrogen molecules, with the hydrogen storage energy reaching 8.07 wt%. This shows that boron doping can effectively improve the hydrogen storage performance of the system.