• 文献标题:   Behavior of a chemically doped graphene junction
  • 文献类型:   Article
  • 作  者:   FARMER DB, LIN YM, AFZALIARDAKANI A, AVOURIS P
  • 作者关键词:   carrier mobility, doping profile, graphene, organic compound, transistor
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   IBM Corp
  • 被引频次:   100
  • DOI:   10.1063/1.3142865
  • 出版年:   2009

▎ 摘  要

Polyethylene imine and diazonium salts are used as complementary molecular dopants to engineer a doping profile in a graphene transistor. Electronic transport in this device reveals the presence of two distinct resistance maxima, alluding to neutrality point separation and subsequent formation of a spatially abrupt junction. Carrier mobility in this device is not significantly affected by molecular doping or junction formation, and carrier transmission is found to scale inversely with the effective channel length of the device. Chemical dilutions are used to modify the dopant concentration and, in effect, alter the properties of the junction.