• 文献标题:   Dynamics of Antimonene-Graphene Van Der Waals Growth
  • 文献类型:   Article
  • 作  者:   FORTINDESCHENES M, JACOBBERGER RM, DESLAURIERS CA, WALLER O, BOUTHILLIER E, ARNOLD MS, MOUTANABBIR O
  • 作者关键词:   antimonene, epitaxy, graphene, in situ microscopy, van der waals heterostructure
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Ecole Polytech Montreal
  • 被引频次:   12
  • DOI:   10.1002/adma.201900569
  • 出版年:   2019

▎ 摘  要

Van der Waals (vdW) heterostructures have recently been introduced as versatile building blocks for a variety of novel nanoscale and quantum technologies. Harnessing the unique properties of these heterostructures requires a deep understanding of the involved interfacial interactions and a meticulous control of the growth of 2D materials on weakly interacting surfaces. Although several epitaxial vdW heterostructures have been achieved experimentally, the mechanisms governing their synthesis are still nebulous. With this perspective, herein, the growth dynamics of antimonene on graphene are investigated in real time. In situ low-energy electron microscopy reveals that nucleation predominantly occurs on 3D nuclei followed by a self-limiting lateral growth with morphology sensitive to the deposition rate. Large 2D layers are observed at high deposition rates, whereas lower growth rates trigger an increased multilayer nucleation at the edges as they become aligned with the Z2 orientation leading to atoll-like islands with thicker, well-defined bands. This complexity of the vdW growth is elucidated based on the interplay between the growth rate, surface diffusion, and edges orientation. This understanding lays the groundwork for a better control of the growth of vdW heterostructures, which is critical to their large-scale integration.