▎ 摘　　要

We propose a detailed mechanism of suppressing the nucleation density of large-scale graphene on Cu foil during the chemical vapor deposition. Here, quasi-monolayer (discontinuous) graphene with an individual domain was grown at a series of temperatures ranging from 950 to 1060 degrees C. The nucleation was investigated via modulating the surface morphology of Cu foil by chemical etching, pre-annealing and adjusting the gas flow ratio of CH4 to H-2. It revealed that proper chemical etching and H-2 pre-annealing could efficiently improve the morphological performance of Cu substrates and suppress the nucleation density. Furthermore, the nucleation greatly depends on the growth temperature. As the temperature increased from 960 to 1060 degrees C, nuclei densities decreased gradually while domain sizes increased. Another critical factor is the gas flow rate of CH4. It indicates that lower gas flow rates are benefit for lower nuclei densities and larger domain sizes of graphene with a steady H-2 gas flow rate. Moreover, we find the most proper temperature for the growth of CVD-graphene is about 1030 degrees C in this work. (C) 2015 Elsevier B.V. All rights reserved.