• 文献标题:   Interfacial Self-Assembly of Atomically Precise Graphene Nanoribbons into Uniform Thin Films for Electronics Applications
  • 文献类型:   Article
  • 作  者:   SHEKHIREV M, VO TH, POUR MM, LIPATOV A, MUNUKUTLA S, LYDING JW, SINITSKII A
  • 作者关键词:   atomically precise graphene nanoribbon, chlorosulfonic acid, selfassembly, bottomup synthesi, thin film, fieldeffect transistor
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244
  • 通讯作者地址:   Univ Nebraska
  • 被引频次:   7
  • DOI:   10.1021/acsami.6b12508
  • 出版年:   2017

▎ 摘  要

Because of their intriguing electronic and optical properties, atomically precise graphene nanoribbons (GNRs) are considered to be promising materials for electronics and photovoltaics. However, significant aggregation and low solubility of GNRs in conventional solvents result in their poor processability for materials characterization and device studies. In this paper, we demonstrate a new fabrication approach for large-scale uniform thin films of nonfunctionalized atomically precise chevron-type GNRs. The method is based on (1) the exceptional solubility of graphitic materials in chlorosulfonic acid and (2) the original interfacial self assembly approach by which uniform films that are single-GNR (similar to 2 nm) thick can be routinely prepared. These films can be transferred to various substrates including Si/SiO2 and used for the streamlined fabrication of arrays of GNR-based devices. The described self-assembly approach should be applicable to other types of solution-synthesized atomically precise GNRs as well as large polyaromatic hydrocarbon (PAH) molecules and therefore should facilitate and streamline their device characterization.