▎ 摘　　要

High-energy and k-space resolution angle-resolved photoemission spectroscopy experiments were achieved on nominally single and bilayer graphene grown by Si-flux assisted molecular beam epitaxy (MBE) on the C-face of SiC. This material shows the same structure as the graphene grown by standard high-temperature annealing of SiC, noticeably the rotational disorder and the very weak electronic coupling between stacked layers. The SiC substrate induces a strong doping by charge transfer, with a Dirac point located 320 meV below the Fermi level for monolayer graphene. The efficient screening by the successive graphene layers results in a reduction of this value to 190 meV for bilayer graphene. The opening of an energy band gap, whose width is inversely dependent on the thickness, is also reported. These measurements emphasize the potentialities of the Si-flux assisted MBE technique, more particularly for homogeneous low thickness graphene growth on the C-face of SiC.