▎ 摘　　要

One hundred nm-thick Bi2Mg2/3Nb4/3O7 (BMN) thin films were deposited onto graphene bottom electrodes at 300 degrees C via on-axis sputtering and facing-target sputtering (FTS) to produce 4 x 4 cm(2) capacitors. The graphene films grown on Ni (250 nm)/Si (001) via rapid-thermal chemical vapor deposition (RTP CVD) were transferred to Ti (10 nm)/SiO2 (250 nm)/Si (001) substrates for removal of the wrinkles and ripples. The on-axis sputtering deteriorated the dielectric and leakage current properties of the BMN capacitors. The FTS method was free of plasma damage, which remarkably enhanced the electrical properties of the BMN/graphene thin-film capacitors. FTS is an attractive method for large-scale thin-film capacitors that use graphene bottom electrodes. (C) 2016 Elsevier B.V. All rights reserved.