▎ 摘　　要

Based on the ability of InxGa1-xN materials to optimally span the solar spectrum and their superior radiation resistance, solar cells based on p-type InxGa1-xN with low indium contents and interfacing with graphene film (G/InxGa1-xN), is proposed to exploit the benefit of transparency and work function tunability of graphene. Then, their solar power conversion efficiency modeled and optimized using a new analytical approach taking into account all recombination processes and accurate carrier mobility. Furthermore, their performance was compared with graphene on silicon counterparts and G/p-InxGa1-xN showed relatively smaller short-circuits current (similar to 7mA/cm(2)) and significantly higher open-circuit voltage (similar to 4V) and efficiency (similar to 30%). The thickness, doping concentration, and indium contents of p-InxGa1-xN and graphene work function were found to substantially affect the performance of G/p-InxGa1-xN. (C) 2014 AIP Publishing LLC.