• 文献标题:   Inhibiting Klein Tunneling in a Graphene p-n Junction without an External Magnetic Field
  • 文献类型:   Article
  • 作  者:   OH H, COH S, SON YW, COHEN ML
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Univ Calif Berkeley
  • 被引频次:   6
  • DOI:   10.1103/PhysRevLett.117.016804
  • 出版年:   2016

▎ 摘  要

We study by first-principles calculations a densely packed island of organic molecules (F(4)TCNQ) adsorbed on graphene. We find that with electron doping the island naturally forms a p-n junction in the graphene sheet. For example, a doping level of similar to 3 x 10(13) electrons per cm(2) results in a p-n junction with an 800 meV electrostatic potential barrier. Unlike in a conventional p-n junction in graphene, in the case of the junction formed by an adsorbed organic molecular island we expect that the Klein tunneling is inhibited, even without an applied external magnetic field. Here Klein tunneling is inhibited by the ferromagnetic order that spontaneously occurs in the molecular island upon doping. We estimate that the magnetic barrier in the graphene sheet is around 10 mT.