▎ 摘　　要

A copper substrate soaking-treatment with FeCl3 solution is introduced to significantly reduce the initial nucleation density of graphene (up to 6-fold from 0.29 to 0.05 mm(-2)), and the overall graphene coverage increase-rate is successfully increased. The reduction in nucleation density is attributed to the oxidization of copper by treatment with the FeCl3 solution according to the X-ray photoelectron spectroscopy results. The soaking-treatment results in a rougher surface and consequently significant surface morphology rebuilding during the chemical vapor deposition. Pretreatment of copper substrate by soaking in FeCl3 solution is a simple and economical approach to control graphene growth. Most importantly, the technique is compatible with the common patterning technique of graphene.