▎ 摘　　要

Metal-induced layer-exchange growth of amorphous carbon (a-C) is a unique technique for fabricating high quality, uniform multilayer graphene (MLG) directly on an insulating material. Here, we investigated the effect of transition-metal species on the interaction between metals and a-C in the temperature range of 600-1000 degrees C. As a result, metals were classified into four groups: (1) layer exchange (Co, Ni, Cr, Mn, Fe, Ru, Ir, and Pt), (2) carbonization (Ti, Mo, and W), (3) local MLG formation (Pd), and (4) no graphitization (Cu, Ag, and Au). Some layer exchange metals allowed for low-temperature MLG synthesis at 600 C, whereas others allowed for high-quality MLG with a we constructed metal selection guidelines for growing MLG o advanced electronic devices with carbon materials. Raman G/D peak ratio of up to 8.3. Based on the periodic table, n an insulator, opening the door for applications that combine