▎ 摘　　要

A simple semianalytical model is proposed to predict the possibilities of effective manipulation of electronic states in a graphene-like and a two dimensional boron nitride-like quantum dot superlattices by means of lateral electric field. Due to the Wannier-Stark localization an one dimensional energy dispersion in the perpendicular to the electric field direction is observed. Interestingly, one dimensional analogs of Dirac points of minibands' touching are observed in the energy dispersion, for the artificial graphene when electric field is weak enough. However, an energy gap between the minibands is opened when an electric field of a significant strength is applied. On the other hand, it is demonstrated that the appropriate choice of the electric field strength can lead to the recovering of touching points in one dimensional energy dispersion of artificial boron nitride monolayer which are not observable in the absence of electric field. Importantly, the analysis of the electron probability distributions brings out an efficient mechanism of switching between the quantum localized states in different sublattices by means of laterally applied electric field. The obtained results indicate on the possibility of a simple and effective control of the properties of optical and logical devices based on honeycomb semiconductor superlattices.