• 文献标题:   Valley-symmetry-preserved transport in ballistic graphene with gate-defined carrier guiding
  • 文献类型:   Article
  • 作  者:   KIM M, CHOI JH, LEE SH, WATANABE K, TANIGUCHI T, JHI SH, LEE HJ
  • 作者关键词:  
  • 出版物名称:   NATURE PHYSICS
  • ISSN:   1745-2473 EI 1745-2481
  • 通讯作者地址:   Pohang Univ Sci Technol
  • 被引频次:   30
  • DOI:   10.1038/NPHYS3804
  • 出版年:   2016

▎ 摘  要

Ever since the discovery of graphene(1), valley symmetry and its control(2,3) in the material have been a focus of continued studies in relation to valleytronics(4,5). Carrier-guiding quasi-one-dimensional (1D) graphene nanoribbons (GNRs)(6-12) with quantized energy subbands preserving the intrinsic Dirac nature have provided an ideal system to that end. Here, by guiding carriers through dual-gate operation in high-mobility monolayer graphene, we report the realization of quantized conductance in steps of 4e(2)/h in zero magnetic field, which arises from the full symmetry conservation of quasi-1D ballistic GNRs with effective zigzag-edge conduction. A tight-binding model calculation confirms conductance quantization corresponding to zigzag-edge conduction even for arbitrary GNR orientation. Valley-symmetry conservation is further confirmed by intrinsic conductance interference with a preserved Berry phase of pi in a graphene-based Aharonov-Bohm(AB) ring preparedby similar dualgating. This top-down approach for gate-defined carrier guiding in ballistic graphene is of particular relevance in the efforts towards efficient and promising valleytronic applications.