• 文献标题:   Favorable Zigzag Configuration at Etched Graphene Edges
  • 文献类型:   Article
  • 作  者:   GUO YF, GUO WL
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY C
  • ISSN:   1932-7447 EI 1932-7455
  • 通讯作者地址:   Nanjing Univ Aeronaut Astronaut
  • 被引频次:   11
  • DOI:   10.1021/jp205671r
  • 出版年:   2011

▎ 摘  要

To control and improve edge quality during etching process is a desired goal for fabricating graphene nanostructure. The preferred edge atomic configurations and shapes when etching pure armchair and zigzag graphene edges have been extensively studied by first-principles calculations. In the beginning stage of etching, it is energetically favorable to remove a specific four-atom carbon segment from flat armchair edge and a three-atom segment from zigzag edge. The subsequent etching on armchair edge shows strong tendency to start from the etched site because of higher chemical reactivity, and a triangle pit with an angle of 120 degrees and zigzag boundary configuration is expected to form on armchair edge. In contrast, the initial etched site on zigzag edge exhibits similar chemical reactivity to other unetched edge atoms. Nevertheless, all created configurations at the etched boundaries are zigzag-edged despite the fact that armchair or zigzag edge could be etched into several shapes. Our results promise that the zigzag chirality be dominating on the edges of graphene nanostructure after patterned under proper etching condition.