▎ 摘　　要

Two-dimensional (2D) graphene/semiconductors van der Waals (vdW) heterostructures possess ultra high carrier mobility and fine mechanical properties, which show potential applications in nanoelectronics. The regulations on interface Schottky barriers and doping concentrations are still important questions. In this work, the electronic properties of graphene/alpha-tellurene (Gr/alpha-Te) van der Waals heterobilayers (vdW HBS) are studied via first-principle calculations. It is found that p-type Schottky contact with a low p-type Schottky barrier height (similar to 0.18 eV) is formed at the graphene-alpha-Te interface. Furthermore, n-type Schottky barrier transforms to p-type when we compress interlayer distance or apply external electric field. Moreover, the hole doping in graphene can be modulated to electron doping via compressing interlayer distance from 3.53 angstrom to 2.70 angstrom or exerting weak negative electric field. These predicted results show that Gr/alpha-Te vdW HBS possesses interlayer-distance and electric-field dependent Schottky barrier height, which is very useful to develop Gr/alpha-Te-based electronic devices.