• 文献标题:   Temperature dependence of interface barrier height change and field emission studies of plasma-treated graphene films
  • 文献类型:   Article
  • 作  者:   WU SX, XUE SL, ZENG YJ, ZHOU WK, HAN JW
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS EXPRESS
  • ISSN:   1882-0778 EI 1882-0786
  • 通讯作者地址:   Donghua Univ
  • 被引频次:   2
  • DOI:   10.7567/APEX.7.095101
  • 出版年:   2014

▎ 摘  要

The field emission properties of plasma-treated graphene films (PTGFs) have been investigated from 300 to 50 K. It is found that the turn-on field increases from 4 to 6.2 V/mu m, and the current density decreases with decreasing temperature. On the basis of the semiconductor thermionic emission theory, the changes in field emission properties at low temperature can be successfully explained. The increase in interface barrier height at low temperature results in the changes in the field emission properties of PTGFs. (C) 2014 The Japan Society of Applied Physics