▎ 摘　　要

A chemical vapor deposition (CVD) method for the preparation of various graphene-based nanostructures is described. The morphology, microstructure, elemental distribution, and bonding states of the different products obtained during reaction optimization were analyzed by various characterization methods. With a Ni sputtering time of 50 s, growth temperature of 950 degrees C, pretreatment time of 30 min, and growth time of 10 min, a one-dimensional (1-D) graphene-based nanostructure was successfully grown on a Si substrate. The growth mechanism of the 1-D graphene-based nanostructures was then analyzed experimentally. The obtained 1-D carbon nanostructure was composed of curled or wound graphene sheets, the majority of which exhibit carbon nano tube-like hollow structures and characteristics similar to graphene nanoribbons. This 1-D carbon nanostructure can find potential applications in the development of sensors, capacitors, and catalysts, mainly due to its high aspect ratio, large surface area, and favorable characteristics.