▎ 摘　　要

In this paper, we present theoretical definitions and physical backgrounds of turn-on voltage, saturation voltage and transition slope in graphene-based variable-barrier transistors (barristors). We show that they are three main characteristics parameters of the device and are of the key factors in determining whether barristor is applicable for the future nanoelectronics. Furthermore, because of the importance of physical modeling of semiconductor devices, we address this issue and develop physical expressions, in closed form, for these characteristics. We also investigate the conformity of the functional dependence of our models and their results variations regarding to the device parameters with the reports of the previous works. Finally, we physically discuss how the variation of the device parameters, such as bias condition and doping density, can influence the aforesaid main characteristics of barristor.